Fin trim plug structures with metal for imparting channel stress

A static-random access memory (SRAM) integrated circuit structure, comprising:

• a PMOS pull-up transistor, comprising:
• a fin;
• an isolation structure over an end of the fin, wherein the isolation structure comprises a dielectric material laterally surrounding an isolated metal structure;
• and
• a gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of a region of the fin, wherein the gate structure is spaced apart from the isolation structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a fin comprising silicon, the fin having a top and sidewalls, wherein the top has a longest dimension along a direction;
• a first isolation structure over a first end of the fin;
• a gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of a region of the fin, wherein the gate structure is spaced apart from the first isolation structure along the direction;
• and
• a second isolation structure over a second end of the fin, the second end opposite the first end, the second isolation structure spaced apart from the gate structure along the direction, wherein the first isolation structure and the second isolation structure both comprise a dielectric material laterally surrounding an isolated metal structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including a static-random access memory (SRAM) integrated circuit structure, comprising:
• a PMOS pull-up transistor, comprising:
• a fin;
• an isolation structure over an end of the fin, wherein the isolation structure comprises a dielectric material laterally surrounding an isolated metal structure;
• and
• a gate structure comprising a gate electrode over the top of and laterally adjacent to the sidewalls of a region of the fin, wherein the gate structure is spaced apart from the isolation structure.