NCFET transistor comprising a semiconductor-on-insulator substrate

A method of fabricating a negative-capacitance field-effect transistor (NCFET), the method comprising:

• providing a semiconductor support, substrate;
• providing a semiconductor donor, substrate;
• forming at least one ferroelectric layer on a surface of the support substrate and/or a surface of the donor substrate;
• forming a weakened zone in the donor substrate, so as to delimit a semiconductor layer to be transferred;
• bonding the donor substrate to the support substrate, each ferroelectric layer being disposed at a bonding interface between the donor substrate and the support substrate;
• detaching the donor substrate along the weakened zone, so as to transfer the semiconductor layer onto the support substrate, the semiconductor layer forming an active layer of the field-effect transistor;
• forming the channel in the active layer;
• forming a source and a drain in the active layer on either side of the channel;
• and
• depositing a gate dielectric on the channel;
• and
• forming a gate on the channel, the gate being electrically insulated from the channel by the gate dielectric.