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US 12,588,249 B2Granted
Integrated circuit devices including a cross-coupled structure
AssigneeSamsung Electronics Co., Ltd.
InventorsSeungyoung Lee, Saehan Park
Life of this patent
Estimating the term…
Abstract
Cross-coupled structures are provided. Cross-coupled structures may include a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor, the second transistor, and the fourth transistor may be spaced apart from each other in a first direction, and the third transistor and the second transistor may be stacked in a second direction that is perpendicular to the first direction. The third transistor and the second transistor may include a common gate structure, a first portion of the common gate structure may be a gate structure of the second transistor, and a second portion of the common gate structure may be a gate structure of the third transistor.
Claims20
A cross-coupled structure comprising:
- a first transistor comprising a first channel layer and a first dummy channel layer;
- a second transistor;
- a third transistor;
- and
- a fourth transistor comprising a second channel layer and a second dummy channel layer,
- wherein the first transistor, the second transistor, and the fourth transistor are spaced apart from each other in a first direction,
- wherein the third transistor and the second transistor are stacked in a second direction that is perpendicular to the first direction,
- wherein the third transistor and the second transistor comprise a common gate structure, a first portion of the common gate structure is a gate structure of the second transistor, and a second portion of the common gate structure is a gate structure of the third transistor,
- wherein the first transistor further comprises a first gate structure that includes a first gate electrode and a first dummy gate electrode that is in contact with the first gate electrode,
- wherein the fourth transistor further comprises a fourth gate structure that includes a second gate electrode and a second dummy gate electrode that is in contact with the second gate electrode,
- wherein the first channel layer is spaced apart from the first dummy channel layer in the second direction by the first gate electrode and the first dummy gate electrode, and
- wherein the second channel layer is spaced apart from the second dummy channel layer in the second direction by the second gate electrode and the second dummy gate electrode.
9 more elements
A cross-coupled structure comprising:
- a first gate structure that comprises a first gate electrode and a first dummy gate electrode that is in contact with the first gate electrode;
- a first channel layer in the first gate electrode;
- a first dummy channel layer in the first dummy gate electrode;
- a common gate structure, wherein a first portion of the common gate structure is a second gate structure, and a second portion of the common gate structure is a third gate structure;
- a fourth gate structure that comprises a second gate electrode and a second dummy gate electrode that is in contact with the second gate electrode;
- a second channel layer in the second gate electrode;
- and
- a second dummy channel layer in the second dummy gate electrode,
- wherein the first gate structure, the common gate structure, and the fourth gate structure are spaced apart from each other in a first direction,
- wherein the first gate electrode and the first dummy gate electrode are between the first channel layer and the first dummy channel layer in a second direction that is perpendicular to the first direction, and
- wherein the second gate electrode and the second dummy gate electrode are between the second channel layer and the second dummy channel layer in the second direction.
8 more elements
A cross-coupled structure comprising:
- a first gate structure that comprises a first gate electrode and a first dummy gate electrode that is in contact with the first gate electrode;
- a first channel layer in the first gate electrode;
- a first dummy channel layer in the first dummy gate electrode;
- a common gate structure, wherein a first portion of the common gate structure is a second gate structure, and a second portion of the common gate structure is a third gate structure;
- and
- a fourth gate structure that comprises a second gate electrode and a second dummy gate electrode that is in contact with the second gate electrode;
- a second channel layer in the second gate electrode;
- and
- a second dummy channel layer in the second dummy gate electrode,
- wherein the first gate structure, the common gate structure, and the fourth gate structure are spaced apart from each other in a first direction,
- wherein the third gate structure and the second gate structure are stacked in a second direction that is perpendicular to the first direction,
- wherein each of the first gate structure, the common gate structure, and the fourth gate structure has a thickness in the second direction,
- wherein the first gate electrode and the first dummy gate electrode are between the first channel layer and the first dummy channel layer in the second direction, and
- wherein the second gate electrode and the second dummy gate electrode are between the second channel layer and the second dummy channel layer in the second direction.
11 more elements
Dependencies are inferred from the claim text.