Method for manufacturing for forming source/drain contact features and devices manufactured thereof

A method, comprising:

• receiving a precursor structure comprising:
• an active region comprising a channel region and a source/drain region,
• a gate structure disposed over the channel region and comprising a lower portion and an upper portion, wherein the gate structure comprises a gate dielectric layer and a gate electrode over the gate dielectric layer, the gate electrode comprises a titanium-containing material;
• a gate spacer disposed along a sidewall of the lower portion of the gate structure, wherein the gate electrode in the upper portion of the gate structure extends over the gate spacer,
• a source/drain feature disposed over the source/drain region,
• a contact etch stop layer (CESL) disposed over the source/drain feature, and
• an interlayer dielectric (ILD) layer disposed over the CESL;
• forming a mask over the precursor structure, the mask comprising an opening exposing the gate structure and a portion of the CESL and ILD layer over the source/drain feature;
• selectively removing the exposed portion of the ILD layer;
• and
• forming a source/drain contact over the source/drain feature.

A method, comprising:

• forming a dummy gate stack over a channel region;
• forming a gate spacer extending along a sidewall of the dummy gate stack;
• forming a contact etch stop layer (CESL) adjacent to the gate spacer;
• and
• forming an interlayer dielectric (ILD) layer over the CESL;
• after the forming of the ILD layer, removing an upper portion of the gate spacer to form a recess;
• after the etching of the gate spacer, removing the dummy gate stack to form a trench;
• forming a gate structure in the recess and the trench, the gate structure extending over the gate spacer;
• and
• forming a conductive feature extending through the ILD layer and the CESL.