Semiconductor structure and manufacturing method of the same

A manufacturing method of a semiconductor structure, comprising:

• providing a sub-substrate having a thickness between 0 and 0.5 μm;
• forming an epitaxial layer on the sub-substrate, wherein the sub-substrate has a first outer surface that is opposite to the epitaxial layer, and the epitaxial layer comprises a buffer layer, a channel layer and a barrier layer, the buffer layer is disposed between the sub-substrate and the channel layer, and the channel layer is disposed between the buffer layer and the barrier layer;
• forming a device layer on the barrier layer to form a stacked structure;
• forming a passivation layer on the device layer, wherein the passivation layer has a second outer surface that is opposite to the device layer;
• providing a carrier substrate, wherein the device layer is between the carrier substrate and the sub-substrate;
• removing at least a portion of the sub-substrate;
• forming at least one through hole in the stacked structure, wherein the through hole penetrates the device layer and a portion of the epitaxial layer or penetrates the sub-substrate and the epitaxial layer, and the through hole penetrates only one of the first outer surface and the second outer surface;
• forming at least one interconnector structure disposed in and covering the through hole, wherein the interconnector structure is electrically connected to the epitaxial layer or the device layer;
• and
• transferring the stacked structure and the interconnector structure from the carrier substrate to a lead frame, such that the sub-substrate is disposed on the lead frame.