Semiconductor device having U-shaped structure, method of manufacturing semiconductor device, and electronic device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHuilong Zhu, Chen Li
Life of this patent
Estimating the term…
Abstract
Disclosed are a semiconductor device having a U-shaped structure, a method of manufacturing the semiconductor device, and an electronic including the semiconductor device. According to an embodiment, the semiconductor device may include: a first fin and a second fin disposed opposite to each other, wherein the first fin and the second fin extend in a vertical direction with respect to a substrate; a connection nanosheet connecting a bottom end of the first fin to a bottom end of a second fin to form a U-shaped structure, wherein the connection nanosheet is spaced apart from a top surface of the substrate.
Claims26
A semiconductor device, comprising:
- a first fin and a second fin disposed opposite to each other, wherein the first fin and the second fin extend in a vertical direction with respect to a substrate;
- and
- a connection nanosheet connecting a bottom end of the first fin to a bottom end of a second fin to form a U-shaped structure,
- wherein the connection nanosheet is spaced apart from a top surface of the substrate,
- wherein the semiconductor device further comprises:
- source/drain portions located on opposite sides of the U-shaped structure in a first direction on the substrate and connected to the U-shaped structure;
- a gate stack extending in a second direction on the substrate and intersecting the U-shaped structure, wherein the second direction intersects the first direction;
- and
- a gate spacer disposed on a sidewall of the gate stack, wherein the gate spacer comprises a first portion above the U-shaped structure and a second portion below the U-shaped structure.
A method of manufacturing a semiconductor device, comprising:
- forming, in a substrate, a first trench extending in a first direction, wherein the first trench comprises sidewalls disposed opposite to each other and extending in the first direction and a bottom surface connecting the sidewalls;
- forming, in the first trench, a semiconductor layer extending along the sidewalls and the bottom surface;
- filling the first trench in which the semiconductor layer is formed, with a first sacrificial layer;
- forming, on a first side of the first trench filled with the first sacrificial layer in a second direction intersecting the first direction, a second trench entering the substrate and extending in the first direction, wherein the second trench extends to a position below the bottom surface of the first trench in the second direction, and a connection of the semiconductor layer and the first sacrificial layer in the first trench to the substrate is maintained on a second side, which opposite to the first side in the second direction, of the first trench;
- forming a second sacrificial layer in the second trench;
- forming, on the second side of the first trench filled with the first sacrificial layer, a third trench entering the substrate and extending in the first direction, wherein the third trench extends to a position below the bottom surface of the first trench in the second direction to reach the second sacrificial layer;
- and
- filling the third trench with a third sacrificial layer, so that the semiconductor layer is surrounded by the first sacrificial layer, the second sacrificial layer and the third sacrificial layer, wherein the first sacrificial layer, the second sacrificial layer and the third sacrificial layer are configured to be selectively etched with respect to the semiconductor layer.
Dependencies are inferred from the claim text.