Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode separated from the first electrode, the second electrode including a contact part protruding toward the first electrode;
• a first region located on a portion of the first electrode and positioned between the first electrode and the second electrode, the first region including
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being located on the first semiconductor region, and
• a third semiconductor region located on the portion of the second semiconductor region, the third semiconductor region being of the first conductivity type, the third semiconductor region including a first part and a second part,
• a gate electrode facing the third semiconductor region via a gate insulating layer in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the second electrode,
• a fourth semiconductor region located between the third semiconductor region and the contact part in the first direction, the fourth semiconductor region being of the first conductivity type, a first-conductivity-type impurity concentration of the fourth semiconductor region being greater than a first-conductivity-type impurity concentration of the third semiconductor region, the fourth semiconductor region being arranged with the first part in a third direction perpendicular to the first and second directions, and
• a fifth semiconductor region located on the third semiconductor region, the fifth semiconductor region being of the second conductivity type, the fifth semiconductor region contacting the contact part in the second direction, the fifth semiconductor region being arranged with the second part in the third direction;
• and
• a second region located on an other portion of the first electrode and positioned between the first electrode and the second electrode, the second region including
• a sixth semiconductor region of the second conductivity type, the sixth semiconductor region having a higher second-conductivity-type impurity concentration than the second semiconductor region,
• an other portion of the second semiconductor region located on the sixth semiconductor region, and
• a seventh semiconductor region located on the other portion of the second semiconductor region, the seventh semiconductor region being of the first conductivity type.