Method of manufacturing semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device according to an embodiment includes: forming a mask material having an opening on a surface of a silicon carbide layer; forming a trench in the silicon carbide layer using the mask material as a mask; performing first ion implantation for implanting carbon (C) into a bottom face of the trench using the mask material as a mask; forming a sidewall material on a side face of the trench; performing second ion implantation for implanting a p-type first impurity into the bottom face of the trench using the sidewall material as a mask; and performing heat treatment at 1600° C. or more.
Claims5
A method of manufacturing a semiconductor device comprising:
- forming a mask material having an opening on a surface of a silicon carbide layer;
- forming a trench in the silicon carbide layer using the mask material as a mask;
- performing first ion implantation for implanting carbon (C) into a bottom face of the trench using the mask material as a mask;
- forming a sidewall material on a side face of the trench;
- performing second ion implantation for implanting a p-type first impurity into the bottom face of the trench using the sidewall material as a mask;
- performing third ion implantation for implanting carbon (C) into the bottom face of the trench using the sidewall material as a mask;
- and
- performing heat treatment at 1600° C. or more,
- wherein a dose amount of carbon (C) implanted by the third ion implantation is higher than a dose amount of carbon (C) implanted by the first ion implantation.
Dependencies are inferred from the claim text.