Semiconductor package including an integrated circuit die and an inductor or a transformer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Hao Tsai, Chia-Chia Lin, Kai-Chiang Wu, Chuei-Tang Wang, Chen-Hua Yu
Life of this patent
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Abstract
An embodiment is a device including an integrated circuit die having an active side and a back side, the back side being opposite the active side, a molding compound encapsulating the integrated circuit die, and a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure including a first metallization pattern and a first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die, at least a portion of the first metallization pattern forming an inductor.
Claims20
A semiconductor package comprising:
- an integrated circuit die having an active side and a back side, the back side being opposite the active side;
- a molding compound encapsulating the integrated circuit die;
- a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure comprising:
- a first dielectric layer on the active side of the integrated circuit die and the molding compound;
- a first metallization pattern in the first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die;
- a second dielectric layer over the first dielectric layer and the first metallization pattern;
- a first conductive via in the second dielectric layer, the first conductive via being electrically coupled to the first metallization pattern, wherein the first conductive via and the first metallization pattern are at least a portion of an inductor;
- and
- an under bump metallization in the second dielectric layer;
- a conductive connector over and electrically coupled to the under bump metallization, the first conductive via being free from an overlying conductive connector;
- and
- an insulating layer over the first conductive via and the second dielectric layer, the insulating layer covering the first conductive via, the insulating layer being spaced apart from the under bump metallization and the conductive connector.
A semiconductor device comprising:
- an integrated circuit die having a first surface and a second surface opposite the first surface;
- a molding compound encapsulating a periphery of the integrated circuit die;
- a first redistribution structure disposed on the first surface of the integrated circuit die and over the molding compound, the first redistribution structure comprising:
- a first dielectric layer formed on the first surface of the integrated circuit die and over the molding compound;
- a metallization layer disposed on the first dielectric layer and electrically connected to the integrated circuit die;
- a second dielectric layer formed over the metallization layer;
- a conductive element formed within the second dielectric layer and electrically coupled to the metallization layer, wherein the conductive element and the metallization layer are a passive electrical component selected from the group consisting of an inductor and a transformer;
- and
- a conductive pad formed on the second dielectric layer and being a portion of the passive electrical component, the conductive pad being covered by a protective layer that is distinct from the second dielectric layer.
A semiconductor device comprising:
- a first dielectric layer over a substrate;
- a first metallization pattern on the first dielectric layer, the first metallization pattern being a part of a back side redistribution structure;
- an integrated circuit die on the back side redistribution structure;
- an encapsulant at least laterally surrounding the integrated circuit die;
- a front side redistribution structure over the encapsulant and the integrated circuit die, wherein the front side redistribution structure includes a second dielectric layer and a second metallization pattern configured to form at least one of an inductor or a transformer, wherein an air gap is adjacent to the at least one of the inductor or the transformer within the front side redistribution structure;
- and
- a protection layer over the front side redistribution structure to cover the at least one of the inductor or the transformer.
Dependencies are inferred from the claim text.