Metal-doped switching device and semiconductor device including the same

A memory cell comprising:

• a first electrode layer;
• a second electrode layer arranged to face the first electrode layer;
• a selection layer arranged between the first electrode layer and the second electrode layer;
• a third electrode layer arranged to face the first electrode layer;
• and
• a variable resistance layer arranged between the first electrode layer and the third electrode layer,
• wherein the first electrode layer comprises titanium nitride (TiN), and
• the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt).

A semiconductor device comprising:

• a plurality of first electrode lines extending in a first direction and arranged apart from each other;
• a plurality of second electrode lines extending in a second direction crossing the first direction and arranged apart from each other;
• and
• a plurality of memory cells electrically connected between the first electrode lines and the second electrode lines at intersections between the first electrode lines and the second electrode lines, the plurality of memory cells each comprising a first electrode layer, a selection layer, a second electrode layer, and a variable resistance layer that are electrically connected to each other,
• wherein the first electrode layer comprises titanium nitride (TiN), and
• the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt).