Programming current control for artificial intelligence (AI) devices

Abstract

Techniques for controlling the programming current of a PCM-based AI device using an external resistor are provided. In one aspect, a PCM cell includes: a PCM stack, that has a bottom electrode; a heater disposed directly on the bottom electrode; a PCM unit including a first material disposed on the heater; a top electrode including a second material disposed on the PCM unit; and a resistor adjacent to the PCM stack, wherein the resistor includes a combination of the first material and the second material. A PCM device that includes at least one of the PCM cells, and a method of forming the PCM cell are also provided.

Dependencies are inferred from the claim text.