Semiconductor device and electronic system including the same

A semiconductor device, comprising:

• a first semiconductor structure including a first substrate and circuit devices on the first substrate;
• and
• a second semiconductor structure including a second substrate on the first semiconductor structure and having a first region and a second region, gate electrodes in the first region and stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate, and extending in the second region by different lengths in a second direction perpendicular to the first direction, channel structures extending by penetrating through the gate electrodes, separation regions penetrating through the gate electrodes, extending in the second direction, spaced apart from each other in a third direction perpendicular to the first and second directions, and defining a center block region and an edge block region on an external side of the center block region, and substrate insulating layers in the second substrate between the separation regions in the second region,
• wherein a width of the substrate insulating layers in the third direction is greater in the edge block region than in the center block region.

An electronic system, comprising:

• a semiconductor device including a first semiconductor structure including a first substrate and circuit devices on the first substrate, and a second semiconductor structure including a second substrate on the first semiconductor structure and having a first region and a second region, gate electrodes in the first region and stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate, and extending in the second region by different lengths in a second direction perpendicular to the first direction, channel structures extending by penetrating through the gate electrodes, separation regions penetrating through the gate electrodes, extending in the second direction, spaced apart from each other in a third direction perpendicular to the first and second directions, and defining a center block region and an edge block region on an external side of the center block region on the first and second regions, substrate insulating layers in the second substrate between the separation regions in the second region, and input/output pads electrically connected to the circuit devices, wherein a pitch of the substrate insulating layers in the third direction is greater in the edge block region than in the center block region, and a width of the substrate insulating layers in the third direction is greater in the edge block region than in the center block region;
• and
• a controller electrically connected to the semiconductor device through the input/output pad and configured to control the semiconductor device.