Pick-up structure of memory device and method for manufacturing memory device
AssigneeWinbond Electronics Corp.
InventorsHsin-Hung Chou, Cheng-Shuai Li, Kao-Tsair Tsai
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Abstract
A pick-up structure of a memory device and a method of manufacturing the memory device are provided. The pick-up structure includes pick-up electrode stripes. Each pickup electrode stripe includes a main body portion in the peripheral pick-up region and an extending portion extending from the main body portion to the memory cell region. The extending portion is narrower than the main body portion. The sidewall surface of the extending portion is aligned with the sidewall surface of the main body portion.
Claims19
A pick-up structure of a memory device, formed on a substrate having a memory cell region and a peripheral pick-up region adjacent thereto, the pick-up structure comprising:
- a plurality of pick-up electrode stripes, wherein each of the pick-up electrode stripes comprises:
- a main body portion in the peripheral pick-up region and extending in a first direction;
- and
- an extending portion extending from the main body portion to the memory cell region, wherein a width of the extending portion narrower than a width of the main body portion, and the extending portion has a sidewall surface that is aligned with a sidewall surface of the main body portion;
- wherein the main body portions of the pick-up electrode stripes are arranged in a second direction that is different from the first direction.
A method of forming a memory device, comprising:
- successively forming a first masking layer, a sacrificial material layer and a second masking layer on a substrate, wherein the substrate has a memory cell region and a peripheral pickup region adjacent thereto;
- forming a first pattern and a second pattern in the second masking layer, wherein the first pattern corresponds to the memory cell region and comprises a plurality of first stripe patterns arranged in parallel with each other, and the second pattern corresponds to the peripheral pick-up region and comprises a block pattern and a plurality of second stripe patterns connecting the block pattern and the first stripe patterns;
- transferring the first pattern and the second pattern of the second masking layer into the sacrificial material layer, so that the sacrificial material layer has the first stripe patterns, the block pattern and the second stripe patterns;
- removing the second masking layer having the first pattern and the second pattern;
- forming a plurality of spacer layers over the first masking layer, so that sidewalls of each of the first stripe patterns and each of the second stripe patterns of the sacrificial material layer have corresponding spacer layers;
- performing a first etching on the first masking layer by using the sacrificial material layer and the spacer layers as an etch mask;
- after performing the first etching, removing the sacrificial material layer and leaving the spacer layers;
- and
- performing a second etching on the first masking layer by using the spacer layers as an etch mask, so that the first masking layer has a third pattern.
Dependencies are inferred from the claim text.