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US 12,588,195 B2Granted
Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: conductive layers and interlayer insulating layers, which are alternately stacked; a select conductor spaced apart from the conductive layers; cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor; and an auxiliary conductor in contact with the select conductor.
Claims21
A semiconductor device comprising:
- conductive layers and interlayer insulating layers, which are alternately stacked;
- a select conductor spaced apart from the conductive layers, the select conductor having a top surface facing a direction opposite to a direction facing the conductive layers and a bottom surface opposite to the top surface;
- outer cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor;
- an outer auxiliary conductor surrounding the outer cell plugs, the outer auxiliary conductor being in contact with the select conductor;
- and
- an insulating layer covering the select conductor and the outer auxiliary conductor,
- wherein the outer auxiliary conductor includes round parts and connection parts,
- wherein the round parts respectively surround the outer cell plugs,
- wherein the connection parts connect the round parts adjacent to each other,
- wherein the outer auxiliary conductor has an opening exposing the top surface of the select conductor between the round parts,
- wherein the select conductor includes outer select protrusion parts interposed between the round parts and a stack structure including the conductive layers and the interlayer insulating layers, and
- wherein the insulating layer extends to be in contact with sidewalls of the outer select protrusion parts and the top surface of the select conductor.
9 more elements
A semiconductor device comprising:
- conductive layers and interlayer insulating layers, which are alternately stacked;
- a select conductor spaced apart from the conductive layers, the select conductor having a top surface facing a direction opposite to a direction facing the conductive layers and a bottom surface opposite to the top surface;
- inner cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor;
- inner auxiliary conductors in contact with the select conductor, the inner auxiliary conductors being spaced apart from each other to expose the top surface of the select conductor between the inner auxiliary conductors;
- and
- an insulating layer covering the select conductor and the inner auxiliary conductor,
- wherein the inner auxiliary conductors respectively surround the inner cell plugs,
- wherein the inner auxiliary conductors are disposed at a level higher than that of the select conductor,
- wherein the select conductor includes inner select protrusion parts interposed between the inner auxiliary conductors and a stack structure including the conductive layers and the interlayer insulating layers, and
- wherein the insulating layer extends to be in contact with sidewalls of the inner select protrusion parts and the top surface of the select conductor.
7 more elements
Dependencies are inferred from the claim text.