Image sensor and electronic device including the same

An image sensor, comprising:

• a first floating diffusion (FD) region disposed at a center portion of a shared pixel corresponding to one color filter,
• wherein the shared pixel comprises eight unit pixels, each comprising a photodiode (PD), the eight unit pixels disposed around the first FD region, wherein at least two of the eight unit pixels are separated from one another by a deep trench isolation (DTI) a plurality of first transfer transistors disposed adjacent to the first FD region, wherein each of the eight unit pixels comprises one of the plurality of first transfer transistors;
• four micro-lenses (MLs) disposed in a 2×2 configuration on the eight unit pixels in the shared pixel, wherein the four MLs are disposed around the first FD region;
• a second FD region disposed adjacent to the first FD region in each of the eight unit pixels;
• and
• a second transfer transistor disposed between the first FD region and the second FD region,
• wherein the second transfer transistor is disposed in a circular ring shape around an outer circumference of the first FD region,
• wherein a first unit pixel of the eight unit pixels comprises a reset transistor disposed adjacent to an outer portion of the shared pixel,
• wherein a second unit pixel of the eight unit pixels is disposed adjacent to the first unit pixel and comprises a source follower transistor disposed adjacent to the outer portion of the shared pixel,
• wherein the first FD region is coupled, through a metal wiring, to a source region of the reset transistor and a gate of the source follower transistor, and
• wherein two unit pixels of the eight unit pixels are disposed under each of the four MLs and configure a subpixel of the shared pixel and are configured to generate a light sensing signal for auto focus (AF) information.

An image sensor, comprising:

• a first floating diffusion (FD) region disposed at a center portion of a shared pixel corresponding to one color filter;
• six unit pixels disposed in the shared pixel, each comprising a photodiode (PD), the six unit pixels disposed around the first FD region, wherein at least two of the six unit pixels are separated from one another by a deep trench isolation (DTI);
• a plurality of first transfer transistors disposed adjacent to the first FD region, wherein each of the six unit pixels comprises at least one of the plurality of first transfer transistors;
• and
• four micro-lenses (MLs) disposed in a 2×2 configuration on the six unit pixels in the shared pixel, wherein the four MLs are disposed around the first FD region,
• wherein a first unit pixel of the six unit pixels comprises a reset transistor disposed adjacent to an outer portion of the shared pixel,
• wherein a second unit pixel of the six unit pixels is disposed adjacent to the first unit pixel and comprises a source follower transistor disposed adjacent to the outer portion of the shared pixel,
• wherein each of the plurality of unit pixels other than the first unit pixel and the second unit pixel comprises a dummy gate corresponding to a gate of at least one of the reset transistor and the source follower transistor,
• wherein the first FD region is coupled, through a metal wiring, to a source region of the reset transistor and a gate of the source follower transistor,
• wherein the four MLs comprise a first ML, a second ML, a third ML, and a fourth ML, where the first ML and the second ML are symmetric with each other with respect to the first FD region,
• wherein a first two unit pixels of the six unit pixels is disposed under the first ML and a second two unit pixels of the six unit pixels is disposed under the second ML, and the first and second two unit pixels configure a subpixel of the shared pixel and are configured to generate auto focus (AF) information using a light sensing signal,
• and one unit pixel of the six unit pixels is disposed under each of the third ML and the fourth ML and each one unit pixel configures a subpixel of the shared pixel.