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US 12,587,162 B2Granted
Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorHideki Iwamoto
Life of this patent
Estimating the term…
Abstract
An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers. The support substrate is a silicon carbide substrate including a 3C-SiC cubic crystal structure. The piezoelectric layer is a lithium tantalate layer or a lithium niobate layer. An SH wave is used as a main mode.
Claims17
An acoustic wave device comprising:
- a support substrate;
- a piezoelectric layer on the support substrate;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the support substrate is a silicon carbide substrate including a 3C—SiC cubic crystal structure;
- the piezoelectric layer is a lithium tantalate layer or a lithium niobate layer;
- the acoustic wave device uses an SH wave as a main mode;
- a main surface of the silicon carbide substrate is a (100) plane;
- and
- an angle between a propagation direction of surface acoustic waves propagating in the piezoelectric layer on the silicon carbide substrate and a [001] direction in a crystal structure of the silicon carbide substrate is about 20° or less.
8 more elements
An acoustic wave device comprising:
- a support substrate;
- a piezoelectric layer on the support substrate;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the support substrate is a silicon carbide substrate including a 3C—SiC cubic crystal structure;
- the piezoelectric layer is a lithium tantalate layer;
- the acoustic wave device uses an SH wave as a main mode;
- an angle between a propagation direction of surface acoustic waves and a [001] direction in a crystal structure of the silicon carbide substrate is about 0° or more and about 20° or less;
- and
- when an angle between the [100] direction in the crystal structure of the silicon carbide substrate and a direction in which the electrode fingers of the IDT electrode extend is denoted by α, and Euler angles of the lithium tantalate layer are denoted by (φLT, θLT, ψLT), Formula 1 and Formula 2 are satisfied:
- θ
- L
-
- T
- ≤
- -
- 0
- .
- 0
-
- 0
-
- 0
-
- 0
-
- 0
-
- 0
-
- 2
-
- 3
-
- 8
-
- 5
-
- α
- 5
- +
- 0
- .
- 0
-
- 0
-
- 0
-
- 0
-
- 5
-
- 2
-
- 6
-
- 3
-
- 0
-
- 8
-
- α
- 4
- -
- 0.
- 0
-
- 3
-
- 5
-
- 7
-
- 2
-
- 1
-
- 5
-
- 1
-
- 7
-
- α
- 3
- +
- 0.06
- 3
-
- 8
-
- 6
-
- 0
-
- 0
-
- 8
-
- 8
-
- 8
-
- α
- 2
- +
- 0
- .
- 4
-
- 5
-
- 5
-
- 8
-
- 3
-
- 6
-
- 7
-
- 9
-
- 1
-
- 8
-
- α
- +
- 1
- 6.5910094271
- ;
- Formula
-
- 1
- and
- θ
- L
-
- T
- ≥
- -
- 0
- .
- 0
-
- 0
-
- 0
-
- 0
-
- 0
-
- 0
-
- 1
-
- 9
-
- 6
-
- 2
-
- α
- 5
- +
- 0
- .
- 0
-
- 0
-
- 0
-
- 0
-
- 4
-
- 5
-
- 9
-
- 6
-
- 9
-
- 1
-
- α
- 4
- -
- 0.
- 0
-
- 3
-
- 3
-
- 8
-
- 1
-
- 3
-
- 6
-
- 3
-
- 8
-
- α
- 3
- +
- 0.07
- 1
-
- 7
-
- 3
-
- 3
-
- 9
-
- 8
-
- 5
-
- 8
-
- α
- 2
- +
- 0
- .
- 2
-
- 8
-
- 7
-
- 1
-
- 0
-
- 1
-
- 4
-
- 6
-
- 0
-
- 0
-
- α
- +
- 150.5064489119
- .
- Formula
-
- 2
264 more elements
An acoustic wave device comprising:
- a support substrate;
- a piezoelectric layer on the support substrate;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the support substrate is a silicon carbide substrate including a 3C—SiC cubic crystal structure;
- the piezoelectric layer is a lithium tantalate layer;
- the acoustic wave device uses an SH wave as a main mode;
- and
- when Euler angles of the silicon carbide substrate are denoted by (φSiC, θSiC, ψSiC), and a thickness of the IDT electrode is denoted by TIDT, Formula 3 is satisfied:
- T
- I
-
- D
-
- T
- >
- -
- 0
- .
- 0
-
- 0
-
- 0
-
- 0
-
- 086722
-
- ψ
- SiC
- 3
- +
- 0.0003976592
- ψ
- SiC
- 2
- -
- 0.000269711
- Ψ
- SiC
- +
- 0.0566210388
- .
- Formula
-
- 3
45 more elements
An acoustic wave device comprising:
- a support substrate;
- a piezoelectric layer on the support substrate;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the support substrate is a silicon carbide substrate including a 3C—SiC cubic crystal structure;
- the piezoelectric layer is a lithium tantalate layer or a lithium niobate layer;
- the acoustic wave device uses an SH wave as a main mode;
- a main surface of the silicon carbide substrate is a (110) plane;
- and
- an angle between a propagation direction of surface acoustic waves propagating in the piezoelectric layer on the silicon carbide substrate and a [001] direction in a crystal structure of the silicon carbide substrate is about 20° or less.
8 more elements
Dependencies are inferred from the claim text.