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US 12,586,782 B2Granted
Active material, anode layer, battery, and methods for producing these
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsMitsutoshi Otaki, Jun Yoshida, Masanori Harata, Yasuhiro Yamaguchi, Kota Urabe, Tatsuya Eguchi
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Abstract
A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount A of the void with a fine pore diameter of 100 nm or less is more than 0.15 cc/g and 0.40 cc/g or less.
Claims11
An active material comprising:
- a primary particle comprising a silicon clathrate II type crystal phase;
- and
- a void inside the primary particle,
- wherein:
- a void amount A of the void with a fine pore diameter of 100 nm or less is more than 0.15 cc/g and 0.40 cc/g or less, and
- the active material is produced by a method comprising:
- an alloying step of obtaining a Na—Si alloy by reacting a Na source and a Si source;
- and
- a silicon clathrate forming step of forming the silicon clathrate II type crystal phase by heating the Na—Si alloy so as to reduce a Na amount in the Na—Si alloy,
- wherein:
- in the silicon clathrate forming step, a scavenger that captures Na in the Na—Si alloy is used, and
- a particle wherein a void amount C of a void with a fine pore diameter of 50 nm or less is 0.05 cc/g or more and 0.20 cc/g or less, is used as the Si source.
9 more elements
An active material comprising a silicon clathrate II type crystal phase,
- a primary particle comprising a silicon clathrate II type crystal phase;
- and
- a void inside the primary particle,
- wherein:
- a void amount B of the void with a fine pore diameter of 50 nm or less is more than 0.10 cc/g and 0.25 cc/g or less, and
- the active material is produced by a method comprising:
- an alloying step of obtaining a Na—Si alloy by reacting a Na source and a Si source;
- and
- a silicon clathrate forming step of forming the silicon clathrate II type crystal phase by heating the Na—Si alloy so as to reduce a Na amount in the Na—Si alloy,
- wherein:
- in the silicon clathrate forming step, a scavenger that captures Na in the Na—Si alloy is used, and
- a particle wherein a void amount C of a void with a fine pore diameter of 50 nm or less is 0.05 cc/g or more and 0.20 cc/g or less, is used as the Si source.
9 more elements
Dependencies are inferred from the claim text.