Surface modification for metal-containing photoresist deposition

A system for promoting adhesion between a substrate and a metal-containing photoresist, the system comprising:

• at least one reaction chamber;
• at least one plasma generator;
• at least one inlet for providing gas and/or plasma to the at least one reaction chamber;
• and
• a controller having at least one processor, the at least one processor configured to control the at least one reaction chamber, the at least one plasma generator, and the at least one inlet to cause:
• (a) receiving the substrate in the at least one reaction chamber, the substrate having a surface comprising a first material, wherein the first material comprises a silicon-based material and/or a carbon-based material,
• (b) generating a plasma comprising chemical functional groups from a plasma generation gas source, wherein the plasma generation gas source comprises one or more of alcohol vapor, carbon monoxide, and carbon dioxide,
• (c) providing the plasma to the at least one reaction chamber, wherein the surface of the substrate is modified by bonds formed between the first material and chemical functional groups from the plasma, and
• (d) after (c), providing the metal-containing photoresist to the at least one reaction chamber, wherein the metal-containing photoresist deposits on the modified surface of the substrate, and wherein the bonds between the first material and chemical functional groups from the plasma promote adhesion between the substrate and the metal-containing photoresist.

A structure, comprising:

• a substrate;
• a first material deposited on the substrate, the first material being silicon-based or carbon-based and comprising a modified surface comprising hydroxyl groups;
• and
• a metal-containing photoresist deposited on the modified surface of the first material, wherein the metal-containing photoresist and the modified surface form metal-oxygen-silicon bonds and/or metal-oxygen-carbon bonds.