Filter circuit
AssigneeTokyo Electron Limited
InventorYohei Yamazawa
Life of this patent
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Abstract
There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.
Claims10
A filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz, the filter circuit comprising:
- a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member;
- and
- a second filter provided in a wiring between the first filter and the power supply,
- wherein the first filter includes:
- a first coil which is connected to the wiring in series and which has no core material or has a first core material with a relative permeability of less than 10, and
- wherein the second filter includes a second coil which is connected to the wiring provided between the first coil and the power supply in series and which has a second core material with a relative permeability of 10 or more.
Dependencies are inferred from the claim text.