Amorphous dielectric, capacitor element, and electronic device

An amorphous dielectric thin film comprising an order-disorder ferroelectric including an ordered domain with a length of 10 nm or less, wherein

• the amorphous dielectric thin film comprises a compound represented by A1+αBOxNy,
• “A” is one or more elements selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na,
• “B” is one or more elements selected from the group consisting of Ta, Nb, Ti, and W,
• −0.3≤α≤0.3, 0<x≤3.50, 0<y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied,
• a sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to and 7.30,
• the compound includes at least La as “A” and includes at least Ti as “B”, and
• the amorphous dielectric thin film has a thickness of 10 nm or more and 400 nm or less.

An amorphous dielectric thin film comprising an order-disorder ferroelectric including an ordered domain with a length of 2 nm or less, wherein

• the amorphous dielectric thin film comprises a compound represented by A1+αBOxNy,
• “A” is one or more elements selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na,
• “B” is one or more elements selected from the group consisting of Ta, Nb, Ti, and W,
• −0.3≤α≤0.3, 0<x≤3.50, 0<y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied,
• a sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30,
• the compound includes at least La as “A” and includes at least Ti as “B”, and
• the amorphous dielectric thin film has a thickness of 10 nm or more and 400 nm or less.

An amorphous dielectric thin film comprising:

• an X-ray diffraction pattern including one or more and two or less broad peaks detected in a diffraction angle 20 range of 10°≤2θ≤60° with CuKα as a primary source of radiation;
• a Raman spectroscopy pattern including one or more and three or less peaks detected in a Raman shift range of 500 cm−1 or more and 1000 cm−1 or less, wherein
• the amorphous dielectric thin film comprises a compound represented by A1+αBOxNy,
• “A” is one or more elements selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na,
• “B” is one or more elements selected from the group consisting of Ta, Nb, Ti, and W,
• −0.3≤α≤0.3, 0<x≤3.50, 0<y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied,
• a sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30,
• the compound includes at least La as “A” and includes at least Ti as “B”, and
• the amorphous dielectric thin film has a thickness of 10 nm or more and 400 nm or less.

An amorphous dielectric thin film comprising:

• a hollow X-ray diffraction pattern in an X-ray diffraction image captured with a transmission electron microscope;
• and
• a Raman spectroscopy pattern including one or more and three or less peaks detected in a Raman shift range of 500 cm−1 or more and 1000 cm−1 or less, wherein
• the amorphous dielectric thin film comprises a compound represented by A1+αBOxNy,
• “A” is one or more elements selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na,
• “B” is one or more elements selected from the group consisting of Ta, Nb, Ti, and W,
• −0.3≤α≤0.3, 0<x≤3.50, 0<y≤1.00, and 6.70≤2x+3y≤7.30 are satisfied,
• a sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30,
• the compound includes at least La as “A” and includes at least Ti as “B”, and
• the amorphous dielectric thin film has a thickness of 10 nm or more and 400 nm or less.