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US 12,586,728 B2Granted
Multilayered capacitor and manufacturing method thereof
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsHyoju Lee, Jinwoo Kim, Seokhyun Yoon, Heesun Chun, Tae Hyung Kim
Life of this patent
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Abstract
A multilayered capacitor including a capacitor body including a dielectric layer and an internal electrode, and an external electrode on the capacitor body, wherein the dielectric layer includes a plurality of dielectric crystal grains, at least one of the plurality of dielectric crystal grains has a core-shell structure, and the shell includes hafnium (Hf).
Claims28
A multilayered capacitor, comprising
- a capacitor body including a dielectric layer and an internal electrode, and
- an external electrode on the capacitor body,
- wherein the dielectric layer includes a plurality of dielectric crystal grains,
- at least one of the plurality of dielectric crystal grains has a core-shell structure including a core and a shell on the core,
- the shell includes hafnium (Hf), and
- in a line analysis using transmission electron microscope-energy dispersive X-ray analysis (TEM-EDX) on the at least one of the plurality of dielectric crystal grains having the core-shell structure, among results from a center of the core to a grain boundary on any side of the at least one of the plurality of dielectric crystal grains having the core-shell structure, the shell has a first peak having the largest atom % of hafnium based on all atoms in the shell, and the first peak is located closer to the core than to the grain boundary.
3 more elements
A method of manufacturing a multilayered capacitor, comprising
- preparing dielectric powder doped with hafnium (Hf),
- manufacturing a dielectric green sheet using the dielectric powder, and forming a conductive paste layer on a surface of the dielectric green sheet,
- stacking dielectric green sheets having the conductive paste layer formed thereon to manufacture a dielectric green sheet stack,
- firing the dielectric green sheet stack to manufacture a capacitor body including a dielectric layer and an internal electrode, and
- forming an external electrode on one surface of the capacitor body,
- wherein the dielectric layer includes a plurality of dielectric crystal grains,
- at least one of the plurality of the dielectric crystal grains has a core-shell structure including a core and a shell on the core,
- the shell includes hafnium (Hf), and
- in a line analysis using transmission electron microscope-energy dispersive X-ray analysis (TEM-EDX) on the at least one of the plurality of dielectric crystal grains having the core-shell structure, among results from a center of the core to a grain boundary on any side of the at least one of the plurality of dielectric crystal grains having the core-shell structure, the shell has a first peak having the largest atom % of hafnium based on all atoms in the shell, and
- the first peak is located closer to the core than to the grain boundary.
7 more elements
A method of manufacturing a multilayered capacitor, comprising
- preparing dielectric powder doped with hafnium (Hf) at less than or equal to 3 atom % based on a total dielectric powder,
- manufacturing a dielectric green sheet using the dielectric powder, and forming a conductive paste layer on a surface of the dielectric green sheet,
- stacking dielectric green sheets having the conductive paste layer formed thereon to manufacture a dielectric green sheet stack,
- firing the dielectric green sheet stack to manufacture a capacitor body including a dielectric layer and an internal electrode, and
- forming an external electrode on one surface of the capacitor body,
- wherein the dielectric layer includes a plurality of dielectric crystal grains,
- at least one of the plurality of the dielectric crystal grains has a core-shell structure including a core and a shell on the core,
- the shell includes hafnium (Hf), and
- in a line analysis using transmission electron microscope-energy dispersive X-ray analysis (TEM-EDX) on the at least one of the plurality of dielectric crystal grains having the core-shell structure, among results from a center of the core to a grain boundary on any side of the at least one of the plurality of dielectric crystal grains having the core-shell structure, the shell has a first peak having the largest atom % of hafnium based on all atoms in the shell, and
- the first peak is located closer to the core than to the grain boundary.
7 more elements
A multilayered capacitor, comprising
- a capacitor body including a dielectric layer and an internal electrode, and
- an external electrode on the capacitor body,
- wherein the dielectric layer includes a plurality of dielectric crystal grains including:
- a main component, and
- a subcomponent including hafnium (Hf),
- at least one of the plurality of dielectric crystal grains has a core-shell structure including a core and a shell on the core,
- the shell includes the subcomponent in a total amount of greater than 0.1 moles and less than or equal to 30.0 parts by mole relative to 100 parts by mole of the main component,
- the core includes the subcomponent in a total amount of less than or equal to 0.1 parts by mole relative to 100 parts by mole of the main component, and
- in a line analysis using transmission electron microscope-energy dispersive X-ray analysis (TEM-EDX) on the at least one of the plurality of dielectric crystal grains having the core-shell structure, among results from a center of the core to a grain boundary on any side of the at least one of the plurality of dielectric crystal grains having the core-shell structure, the shell has a first peak having the largest atom % of hafnium based on all atoms in the shell, and
- the first peak is located closer to the core than to the grain boundary.
7 more elements
Dependencies are inferred from the claim text.