Estimating peak source current using memory die substrate temperature detection

A memory die, comprising:

• a wordline ramp up pump that drives a wordline ramp up process;
• and
• a processor operative to:
• estimate, during the wordline ramp up process, a temperature rise for a substrate region of the memory die located proximate to the wordline ramp up pump from two or more temperature measurements by a temperature sensor in the substrate region;
• determine that a peak source current (ICC peak) of the memory die deviates from a target ICC peak value based on applying a temperature-to-current coefficient for the substrate region to the estimated temperature rise;
• and
• adjust parameters of the wordline ramp up process based on the determination.

A memory die comprising:

• a wordline ramp up pump that drives a wordline ramp up process;
• and
• a processor operative to:
• estimate, during the wordline ramp up process, a temperature rise for a substrate region of the memory die located proximate to the wordline ramp up pump;
• in response to determining a peak source current (ICC peak) of the memory die exceeds a target ICC peak value based on applying a temperature-to-current coefficient for the substrate region to the estimated temperature rise, reduce a ramp rate of the wordline ramp up pump;
• and
• in response to determining the ICC peak is less than the target ICC peak value based on applying the temperature-to-current coefficient for the substrate region to the estimated temperature rise, increase the ramp rate of the wordline ramp up pump.