US 12,586,642 B2Granted

Mechanisms for programming multilevel memory devices with variable memory windows

AssigneeTetraMem Inc.

InventorsMinxian Zhang, Mingche Wu, Ning Ge

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Abstract

The present disclosure provides methods for programming multilevel memory devices. The methods may include determining a first plurality of memory windows representative of gaps between dispersions of adjacent conductance states of the memory device, determining a plurality of dispersion parameters representative of estimated dispersions of the conductance states, and determining a second plurality of memory windows based on the first plurality of memory windows and the plurality of dispersion parameters. The second plurality of memory windows represents separations between mean conductance values of adjacent conductance states of the memory device. The second plurality of memory windows has varying values.

Claims20

Dependent claims

A method for programming a multilevel memory device, the method comprising:

determining a first plurality of memory windows representative of gaps between dispersions of adjacent conductance states of the multilevel memory device;
determining, by a processing device, a plurality of dispersion parameters representative of estimated dispersions of the conductance states;
and
determining, by the processing device, a second plurality of memory windows based on the first plurality of memory windows and the plurality of dispersion parameters, wherein a first memory window of the second plurality of memory windows represents a separation between a mean conductance value of a first conductance state of the multilevel memory device and a mean conductance value of a second conductance state of the multilevel memory device, wherein a second memory window of the second plurality of memory windows represents a separation between a mean conductance value of a third conductance state and a mean conductance value of a fourth conductance state of the multilevel memory device, wherein the first memory window and the second memory window are of different values.

1 more element

A crossbar circuit, comprising:

a plurality of interconnecting electrically conductive lines;
at least one memory device connected to the electrically conductive lines;
and
a controller configured to:
determine a first plurality of memory windows representative of gaps between adjacent conductance state dispersions of the memory device;
determine a plurality of dispersion parameters representative of estimated dispersions of the conductance states;
and
determine a second plurality of memory windows based on the first plurality of memory windows and the plurality of dispersion parameters, wherein a first memory window of the second plurality of memory windows represents a separation between a mean conductance value of a first conductance state of the memory device and a mean conductance value of a second conductance state of the memory device, wherein a second memory window of the second plurality of memory windows represents a separation between a mean conductance value of a third conductance state and a mean conductance value of a fourth conductance state of the memory device, wherein the first memory window and the second memory window are of different values.

5 more elements

Dependencies are inferred from the claim text.