Implementing global wordline bias voltages for read state transitions
AssigneeMicron Technology, Inc.
InventorsChing-Huang Lu, Go Shikata, Gangotree Chakma
Life of this patent
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Abstract
A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including identifying a set of parameters related to the memory device, selecting, based on the set of parameters, a magnitude of a bias voltage to be applied to a global wordline during a read state transition of a block of the memory device from a transient state to a stable state, and causing the bias voltage to be applied to the global wordline.
Claims20
A memory device comprising:
- a memory array;
- and
- control logic, operatively coupled to the memory array, to perform operations comprising:
- identifying a set of parameters related to the memory device;
- selecting, based on the set of parameters, a magnitude of a bias voltage to be applied to a global wordline during a read state transition of a block of the memory device from a transient state to a stable state;
- and
- causing the bias voltage to be applied to the global wordline.
A method comprising:
- identifying, by a processing device a set of parameters related to a memory device;
- selecting, by the processing device based on the set of parameters, a magnitude of a bias
- voltage to be applied to a global wordline during a read state transition of a block of the memory device from a transient state to a stable state;
- and
- causing, by the processing device, the bias voltage to be applied to the global wordline.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- obtaining a temperature of a memory device;
- selecting a magnitude of a bias voltage, proportional to the temperature, to be applied to a global wordline during a read state transition of a block of the memory device from a transient state to a stable state;
- and
- causing the bias voltage to be applied to the global wordline.
Dependencies are inferred from the claim text.