Multiple write programming for a segment of a memory device
AssigneeMicron Technology, Inc.
InventorsHuai-Yuan Tseng, Xiangyu Tang, Eric N. Lee, Haibo Li, Kishore Kumar Muchherla, Akira Goda
Life of this patent
Estimating the term…
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AssigneeMicron Technology, Inc.
InventorsHuai-Yuan Tseng, Xiangyu Tang, Eric N. Lee, Haibo Li, Kishore Kumar Muchherla, Akira Goda
Estimating the term…
A memory device can include a memory array including memory cells arranged in one or more pages. The memory array can be coupled to control logic to receive a first request to write first data to a page of the one or more pages and program the first data to the page of the one or more pages at a first time responsive to receiving the first request. The control logic is further to receive a second request to write second data to the page of the one or more pages, read the page of the one or more pages, and program the second data to the page of the one or more pages at a second time responsive to receiving the second request. The control logic can also receive an erase request to erase the one or more pages after the second time.
A memory device comprising:
A method, comprising:
A non-transitory computer-readable medium storing instructions thereon, wherein the instructions, when executed by a processing device, cause the processing device to:
Dependencies are inferred from the claim text.