Measurement device, lithography system and exposure apparatus, and control method, overlay measurement method and device manufacturing method

A method for calibration in a measurement system used in a manufacturing line for micro-devices comprising a first measurement device and a second measurement device, the method comprising:

• acquiring position information of a plurality of marks formed on a reference substrate held on a first stage configured to be movable in a first coordinate system, the first stage is included in the first measurement device;
• acquiring position information of a plurality of divided areas formed on the reference substrate based on the position information of the plurality of marks acquired by the first measurement device;
• obtaining a first grid information which represents an arrangement information of the plurality of divided areas of the reference substrate in the first coordinate system;
• acquiring position information of the plurality of marks formed on the reference substrate held on a second stage configured to be movable in a second coordinate system, the second stage is included in the second measurement device;
• acquiring position information of the plurality of divided areas formed on the reference substrate based on the position information of the plurality of marks acquired by the second measurement device;
• obtaining a second grid information which represents an arrangement information of the plurality of divided areas of the reference substrate in the second coordinate system;
• and
• calibrating the first coordinate system of the first measurement device and the second coordinate system of the second measurement device based on the first grid information and the second grid information.