Overlay correction method, and exposure method and semiconductor device manufacturing method including overlay correction method

An exposure method comprising:

• acquiring first leveling data of a first wafer;
• converting the first leveling data into overlay data;
• splitting a shot of the first wafer into sub-shots via a shot size split;
• generating a plurality of models by extracting a model for each of the sub-shots from a corresponding portion of the overlay data;
• correcting an overlay parameter of exposure equipment based on at least one of the plurality of models;
• and
• performing an exposure process on the first wafer using the exposure equipment adjusted based on the corrected overlay parameter,
• wherein the shot size split corresponds to a division of the shot of the wafer into the sub-shots of the same size without overlapping with each other.

A semiconductor device manufacturing method comprising:

• acquiring leveling data of at least one of a plurality of wafers;
• converting the leveling data into overlay data;
• splitting a shot of the at least one wafer into sub-shots via a shot size split;
• generating a plurality of models by extracting a model for each of the sub-shots from a portion of the overlay data;
• correcting an overlay parameter of exposure equipment on based on at least one of the plurality of models;
• performing an exposure process on the at least one wafer using the exposure equipment adjusted based on the corrected overlay parameter;
• patterning the at least one exposed wafer;
• and
• performing a subsequent semiconductor process on the at least one patterned wafer,
• wherein the exposure process is performed by correcting the overlay parameter for each of the plurality of wafers and each sub-shot in real time, and
• wherein the shot size split corresponds to a division of the shot of the wafer into the sub-shots of the same size without overlapping with each other.