Composition for forming resist underlying film
AssigneeNissan Chemical Corporation
InventorsShuhei Shigaki, Ken Ishibashi, Wataru Shibayama
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AssigneeNissan Chemical Corporation
InventorsShuhei Shigaki, Ken Ishibashi, Wataru Shibayama
Estimating the term…
R1aR2bSi(R3)4-(a+b) (1) A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.
A resist underlayer film-forming composition comprising a hydrolysis condensate of a hydrolyzable silane mixture containing an alkyltrialkoxysilane and a hydrolyzable silane of the following Formula (1):
A resist underlayer film-forming composition comprising a hydrolysis condensate of a hydrolyzable silane mixture containing an alkyltrialkoxysilane and at least two hydrolyzable silanes, comprising a first and a second hydrolyzable silane, of the following Formula (1):
Dependencies are inferred from the claim text.