Acid for reactive development of metal oxide resists
AssigneeTokyo Electron Limited
InventorsHamed Hajibabaeinajafabadi, Akiteru Ko
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Abstract
A method of reactive developing a metal oxide resist includes providing a gaseous weak acid to a surface of a patterned metal oxide resist including an exposed portion and an unexposed portion, the gaseous weak acid having an acidity (pKa) greater than −2 and less than about 20, and reactive developing the patterned metal oxide resist using a selective acid-base reaction between the gaseous weak acid and the patterned metal oxide resist to form volatile products. The gaseous weak acid acts as the acid and either the exposed portion or the unexposed portion acts as the base.
Claims20
A method of reactive developing a metal oxide resist (MOR) during a semiconductor manufacturing process, the method comprising:
- providing a gaseous weak acid to a surface of a patterned MOR comprising an exposed portion and an unexposed portion, the gaseous weak acid having an acidity (pKa) greater than −2 and less than about 20, the gaseous weak acid comprising a compound selected from the group consisting of
- an alcohol having an organic group comprising a saturated carbon bonded to a hydroxyl group,
- an amine having a nitrogen bonded to an organic group and hydrogen, and
- a Lewis acid comprising boron and at least one organic substituent from the group consisting of
- an alkyl group having the formula CnH2n+1 with n>1,
- an alkoxide group having an alkyl bonded to an oxygen, and
- an amide group having a nitrogen bonded to one or two organic substituents;
- and
- reactive developing the patterned MOR using a selective acid-base reaction between the gaseous weak acid and the patterned MOR to form volatile products, the gaseous weak acid acting as the acid and either the exposed portion or the unexposed portion acting as the base.
A method of reactive developing a metal oxide resist (MOR) during a semiconductor manufacturing process, the method comprising:
- providing a gaseous developer to a surface of a patterned MOR comprising an exposed portion and an unexposed portion, the gaseous developer comprising an at least partially substituted form of a compound selected from the group consisting of
- an alcohol having an organic group comprising a saturated carbon bonded to a hydroxyl group,
- an aromatic alcohol having the formula ArO—H with Ar being an aromatic compound, and
- an amine having a nitrogen bonded to an organic group and hydrogen;
- and
- reactive developing the patterned MOR using a selective acid-base reaction between the gaseous developer and the patterned MOR to form volatile products, the gaseous developer acting as the acid and either the exposed portion or the unexposed portion acting as the base.
A method of reactive developing a metal oxide resist (MOR) comprising:
- providing a gaseous alcohol having an organic group comprising a saturated carbon bonded to a hydroxyl group to a surface of a patterned MOR comprising an exposed portion and an unexposed portion;
- and
- reactive developing the patterned MOR using a selective acid-base reaction between the gaseous alcohol and the patterned MOR to form volatile products, the gaseous alcohol acting as the acid and either the exposed portion or the unexposed portion acting as the base.
Dependencies are inferred from the claim text.