Photoresist with multiple patterning radiation-absorbing elements and/or vertical composition gradient

A method of depositing a metal oxide-containing photoresist material on a substrate, the method comprising:

• flowing a first organometallic precursor and a second organometallic precursor into a reaction chamber with a counter-reactant,
• wherein the first organometallic precursor comprises a metal having a high EUV-absorption cross-section, a first organic group with metal-carbon bond that survives a vapor phase deposition reaction with the counter-reactant, and a first ligand that reacts with the counter-reactant;
• and
• wherein the second organometallic precursor includes a second organic group with metal-carbon bond with metal-carbon bond that survives a vapor phase deposition reaction with the counter-reactant and a second ligand that reacts with the counter-reactant;
• and
• varying the ratio of the first organometallic precursor and second organometallic precursor during the deposition such that the metal oxide-containing photoresist material comprises a vertical composition gradient along a thickness of the metal oxide-containing photoresist material.

A metal oxide-containing photoresist film comprising a vertical composition gradient along a thickness of the film, the vertical composition gradient comprising a first composition and a second composition,

• wherein the first composition comprises a metal having a high EUV-absorption cross-section, and is crosslinked with metal-oxide bonds, a first organic group having metal-carbon bond;
• wherein the second composition comprises the metal having a high EUV-absorption cross-section and more crosslinked with metal-oxide bonds than the first composition;
• and
• wherein the vertical gradient is such that the ratio of the second composition to the first composition is higher at the bottom than at the top of the film.