Method of fabricating mask and method of fabricating semiconductor device using the mask
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Hwan Bae, Se Jin Park
Life of this patent
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Abstract
A method of fabricating a mask by performing optical proximity correction (OPC) is provided. The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve.
Claims20
A method of fabricating a mask, comprising:
- generating bias control points based on an initial target pattern and an initial target curve;
- generating a target curve by using the bias control points;
- extracting a first contour of an initial design mask by performing an optical proximity correction (OPC) process;
- generating a first updated design mask based on updating the initial design mask, using the first contour and the target curve;
- calculating a difference between the target curve and the first contour;
- extracting a second contour of the first updated design mask by performing the OPC process;
- and
- generating a second updated design mask by using the second contour and the target curve.
A method of fabricating a mask, comprising:
- generating an initial target curve;
- generating a plurality of bias control points on the initial target curve;
- generating a target curve by using the bias control points;
- extracting a first contour of an initial design mask by performing an optical proximity correction (OPC) process after the generating the target curve;
- generating a first updated design mask based on updating the initial design mask, using the first contour and the target curve;
- calculating a difference between the target curve and the first contour;
- and
- generating a final design mask by repeatedly performing the OPC process.
A method of fabricating a semiconductor device, comprising:
- fabricating a mask;
- and
- forming patterns on a substrate by using the mask,
- wherein the fabricating the mask, includes:
- generating an initial target pattern,
- generating an initial target curve that meets the initial target pattern,
- generating bias control points on the initial target curve,
- generating a target curve by using the bias control points,
- extracting a first contour of an initial design mask by performing an optical proximity correction (OPC) process after the generating the target curve,
- generating a first updated design mask based on updating the initial design mask, using the first contour and the target curve,
- calculating a difference between the target curve and the first contour;
- extracting a second contour of the first updated design mask by performing the OPC process, and
- generating a second updated design mask by using the second contour and the target curve.
Dependencies are inferred from the claim text.