US 12,584,961 B2Granted

Built-in self test circuit for segmented static random access memory (SRAM) array input/output

AssigneeSTMicroelectronics International N.V.

InventorsBhupender Singh, Hitesh Chawla, Tanuj Kumar, Harsh Rawat, Kedar Janardan Dhori, Manuj Ayodhyawasi, Nitin Chawla, Promod Kumar

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Abstract

An array of a memory includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A row decoder supports two modes of memory operation: a first mode where only one word line in the memory array is actuated during a read and a second mode where one word line per sub-array are simultaneously actuated during the read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. BIST testing of the input/output circuit is supported through data at both the column data output and the sub-array data outputs in order to confirm proper memory operation in support of both the first and second modes of operation.

Claims19

Dependent claims

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to perform BIST testing of the memory circuit dependent on data generated at the column data output and perform BIST testing of the memory circuit dependent on data generated at the plurality of sub-array data outputs;
wherein the BIST circuit comprises:
a multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive a selection signal;
a comparison circuit having a first input coupled to receive an output of the multiplexing circuit and a second input coupled to the column data output;
and
a BIST control circuit configured to generate the selection signal to cause the multiplexing circuit to select data from one of the plurality of sub-array data outputs for comparison by said comparison circuit to data at the column data output.

13 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to perform BIST testing of the memory circuit dependent on data generated at the column data output and perform BIST testing of the memory circuit dependent on data generated at the plurality of sub-array data outputs;
wherein the BIST circuit comprises:
a multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive a selection signal;
a comparison circuit having a first input coupled to receive a read data signal output of the multiplexing circuit and a second input coupled to receive a write data signal;
and
a BIST control circuit configured to generate test data for application to the memory circuit, said test data including said write data signal, and configured to generate the selection signal to cause the multiplexing circuit to select said read data signal from one of the plurality of sub-array data outputs for comparison by said comparison circuit to said write data signal.

13 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
a built-in self test (BIST) circuit configured to perform BIST testing of the memory circuit dependent on data generated at the column data output and perform BIST testing of the memory circuit dependent on data generated at the plurality of sub-array data outputs;
a multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive a selection signal;
and
a comparison circuit having a first input coupled to receive a read data signal output of the multiplexing circuit and a second input coupled to the column data output;
wherein said BIST circuit is configured to perform BIST testing of the memory circuit when in the second mode of memory circuit operation dependent on a flag signal generated at an output of the comparison circuit.

11 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to perform BIST testing of the memory circuit dependent on data generated at the column data output and perform BIST testing of the memory circuit dependent on data generated at the plurality of sub-array data outputs;
wherein each input/output circuit further comprises:
a first multiplexing circuit having inputs coupled to the plurality of bit line inputs and a selection input configured to receive a selection signal;
a second multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive said selection signal;
and
a third multiplexing circuit having inputs coupled to outputs of the first and second multiplexing circuits and a selection input configured to receive a control signal;
wherein said column data output coupled to an output of the third multiplexing circuit;
and
wherein said BIST circuit is configured to apply a first logic state for the control signal and perform BIST testing of the memory circuit dependent on data generated at the column data output from data at the plurality of bit line inputs and configured to apply a second logic state for the control signal and perform BIST testing of the memory circuit dependent on data generated at the column data output from data at the plurality of sub-array data outputs.

16 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to:
apply BIST test data to the memory cells of the memory array;
process data generated at the column data output in response to the applied test data to test the memory circuit for proper operation in support of the first mode of operation;
compare said data generated at the column data output to data generated at a selected one of the plurality of sub-array data outputs in response to the applied test data;
and
process a result of the comparison to test the memory circuit for proper operation in support of the second mode of operation.

13 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to:
apply BIST test data to the memory cells of the memory array, said test data corresponding to write data;
process data generated at the column data output in response to the applied test data to test the memory circuit for proper operation in support of the first mode of operation;
compare said write data to read data generated at a selected one of the plurality of sub-array data outputs in response to the applied test data;
and
process a result of the comparison to test the memory circuit for proper operation in support of the second mode of operation;
wherein the BIST circuit comprises:
a multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive a selection signal;
a comparison circuit having a first input coupled to receive said read data and a second input coupled to receive said write data;
and
a BIST control circuit configured to generate the selection signal to cause the multiplexing circuit to select said read data from one of the plurality of sub-array data outputs for comparison by said comparison circuit to the write data.

18 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to:
apply BIST test data to the memory cells of the memory array;
process data generated at the column data output in response to the applied test data to test the memory circuit for proper operation in support of the first mode of operation;
compare said data generated at the column data output to data generated at a selected one of the plurality of sub-array data outputs in response to the applied test data to generate a flag signal;
and
process the flag signal to test the memory circuit for proper operation in support of the second mode of operation.

13 more elements

A memory circuit, comprising:

a memory array including a plurality of sub-arrays, wherein each sub-array includes memory cells arranged in a matrix with plural rows and plural columns, each row including a word line connected to the memory cells of the row, and each column including a local bit line connected to the memory cells of the column;
a word line drive circuit for each row having an output connected to drive the word line of the row;
a row decoder circuit configured to support two modes of memory circuit operation including:
a first mode where the row decoder circuit actuates only one word line in the memory array during a memory read and a second mode where the row decoder circuit simultaneously actuates one word line per sub-array during the memory read;
an input/output circuit for each column comprising:
a plurality of bit line inputs coupled to the local bit lines of the sub-arrays;
a column data output coupled to the plurality of bit line inputs;
and
a plurality of sub-array data outputs, where each sub-array data output is coupled to a corresponding bit line input;
and
a built-in self test (BIST) circuit configured to:
apply BIST test data to the memory cells of the memory array;
select data generated at the plurality of bit line inputs in response to the applied test data for output at the column data output during memory circuit operation in the first mode of operation;
process said data generated at the column data output to test the memory circuit for proper operation in support of the first mode of operation;
select data generated at the plurality of sub-array data outputs in response to the applied test data for output at the column data output during memory circuit operation in the second mode of operation;
and
process said data generated at the column data output to test the memory circuit for proper operation in support of the second mode of operation;
wherein each input/output circuit comprises:
a first multiplexing circuit having inputs coupled to the plurality of bit line inputs and a selection input configured to receive a selection signal;
a second multiplexing circuit having inputs coupled to the plurality of sub-array data outputs and a selection input configured to receive said selection signal;
and
a third multiplexing circuit having inputs coupled to outputs of the first and second multiplexing circuits and a selection input configured to receive a control signal;
wherein said column data output is coupled to an output of the third multiplexing circuit;
and
wherein said BIST circuit is configured to apply a first logic state for the control signal during BIST testing of the memory circuit operating in the first mode of operation and configured to apply a second logic state for the control signal during BIST testing of the memory circuit operating in the second mode of operation.

22 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/228,048Filed 31 Jul 2023 · us provisional application
Priority: 30 Aug 2022
Published: US 2024/0069096 A129 Feb 2024
Granted: 24 Mar 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

G01R 31/31724
Testing of digital circuits: test controller, e.g. BIST state machine
G11C 11/418
For memory cells of the field-effect type: address circuits
G11C 11/419
For memory cells of the field-effect type: read-write [R-W] circuits
G11C 29/022
Detection or location of defective auxiliary circuits, e.g. defective refresh counters: in I/O circuitry