Polarimetric image sensor
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorFrançois Deneuville
Life of this patent
Estimating the term…
Abstract
A polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor including: —a plurality of pixels, each comprising a photodetector formed in the semiconductor substrate; —a polarizing filter arranged on the side of an illumination surface of the photodetectors, the filter including, for each pixel, a polarizing structure; and—a polarization router comprising a two-dimensional metasurface arranged on the side of the polarizing filter opposite to the photodetectors, the metasurface including a two-dimensional array of pads.
Claims17
Polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor comprising:
- a plurality of pixels, each comprising a photodetector formed in the semiconductor substrate;
- a polarizing filter arranged on the side of an illumination surface of the photodetectors, the filter comprising, for each pixel, a polarizing structure;
- and
- a polarization router comprising a two-dimensional metasurface arranged on the side of the polarizing filter opposite to the photodetectors, the metasurface comprising a two-dimensional array of pads,
- wherein said plurality of pixels comprises at least first and second pixels adapted to measuring radiations according to respectively first and second distinct polarizations, the polarizing structure of the first pixel being adapted to predominantly transmitting a radiation according to the first polarization and the polarizing structure of the second pixel being adapted to predominantly transmitting a radiation according to the second polarization, and
- wherein a first portion of the two-dimensional metasurface located vertically in line with the first and second pixels is adapted to predominantly transmitting:
- a radiation according to the first polarization towards the polarizing structure of the first pixel;
- and
- a radiation according to the second polarization towards the polarizing structure of the second pixel.
Dependencies are inferred from the claim text.