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US 12,584,243 B2Granted
SiC epitaxial wafer
AssigneeResonac Corporation
InventorYoshikazu Umeta
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Abstract
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and few triangular defects. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 μm or less. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less.
Claims9
A SiC epitaxial wafer comprising:
- a SiC substrate;
- and
- a SiC epitaxial layer,
- wherein the SiC substrate has a diameter of 195 mm or more and a thickness of 460 μm or less, and
- wherein the SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less.
2 more elements
Dependencies are inferred from the claim text.