Silicon carbide crystals and silicon carbide wafer
AssigneeGlobalWafers Co., Ltd.
InventorChing-Shan Lin
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Abstract
A silicon carbide crystal and a silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide crystal and the silicon carbide wafer is 100%, the resistivity thereof is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity thereof is less than 0.4%.
Claims12
A silicon carbide crystal, wherein a monocrystalline proportion of the silicon carbide crystal is 100%, a resistivity of the silicon carbide crystal is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity of the silicon carbide crystal is less than 0.4%.
A silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide wafer is 100%, a resistivity of the silicon carbide wafer is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity of the silicon carbide wafer is less than 0.4%.
Dependencies are inferred from the claim text.