Atomic layer deposition method enhancing the nucleation and crystallinity of a boron nitride interface coating on a silicon carbide fiber
AssigneeRtx Corporation
InventorJohn E. Holowczak
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Abstract
A method of forming a ceramic matrix composite includes arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide, depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material having an a-lattice constant and a c-lattice constant, and depositing a boron nitride layer on the nucleating layer. The c-lattice constant of the crystalline material of the nucleating layer corresponds to an a-lattice constant of the silicon carbide, such that the c-lattice constant of the crystalline material is within 3.0% of the a-lattice constant of the silicon carbide.
Claims18
A method of forming a ceramic matrix composite, the method comprising:
- arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide;
- depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material having an a-lattice constant and a c-lattice constant, wherein the crystalline material comprises ruthenium;
- and
- depositing a boron nitride layer on the nucleating layer;
- wherein the c-lattice constant of the crystalline material of the nucleating layer corresponds to an a-lattice constant of the silicon carbide, such that the c-lattice constant of the crystalline material is within 3.0% of the a-lattice constant of the silicon carbide.
A method of forming a ceramic matrix composite, the method comprising:
- arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide;
- depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material comprising ruthenium, the crystalline material having an a-lattice constant and a c-lattice constant;
- and
- depositing a boron nitride layer on the nucleating layer, the boron nitride comprising hexagonal boron nitride and turbostratic boron nitride;
- wherein the a-lattice constant of the crystalline material of the nucleating layer corresponds to an a-lattice constant of each of the hexagonal boron nitride and turbostratic boron nitride, such that the a-lattice constant of the crystalline material is within 8.0% of the a-lattice constant of each of the hexagonal boron nitride and turbostratic boron nitride.
Dependencies are inferred from the claim text.