Method for separating impurities from silicon carbide, and temperature-treated and purified silicon carbide powder

A method for separating impurities from silicon carbide, in which powdery SiC waste products having at least 50% by mass SiC and an average particle size d50 between 0.5 and 1000 μm, measured by laser diffraction, and a minimum content of 0.1% by mass iron and 0.1% by mass metallic silicon are subjected to a temperature treatment under a vacuum or in a non-oxidizing atmosphere at temperatures of 1400-2600° C. and cooled, and are then mechanically treated and physically separated, and subsequently a division of the physically separated SiC powder into two fractions is performed, of which a mass of impurities in one fraction is at least twice as high as in the other fraction.