Bonding wire for semiconductor devices
AssigneesNippon Micrometal Corporation, Nippon Steel Chemical & Material Co., Ltd.
InventorsMotoki Eto, Daizo Oda, Tomohiro Uno, Tetsuya Oyamada
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Abstract
There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at %.
Claims13
A bonding wire for semiconductor devices, the bonding wire comprising:
- a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”);
- and
- a coating containing a noble metal formed on a surface of the Cu core material (hereinafter referred to as a “noble metal coating”), wherein
- a concentration of Cu at a surface of the wire is more than 50 at % and 80 at % or less.
Dependencies are inferred from the claim text.