Semiconductor device and method of making a semiconductor package with graphene-coated interconnects
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYongMoo Shin, HeeSoo Lee, EunHee Myung
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first substrate and a second substrate. A graphene-coated interconnect is disposed between the first substrate and second substrate. A semiconductor die is disposed between the first substrate and second substrate. The first substrate is electrically coupled to the second substrate through the graphene-coated interconnect. An encapsulant is deposited between the first substrate and second substrate.
Claims24
A method of making a semiconductor device, comprising:
- providing a first substrate;
- disposing a semiconductor die over the first substrate;
- providing a second substrate;
- forming a graphene-coated interconnect by,
- providing a copper core,
- forming a polymer coating on the copper core,
- forming a graphene coating on the polymer coating, and
- forming a solder coating on the graphene coating;
- disposing the graphene-coated interconnect over the second substrate after forming the solder coating on the graphene coating;
- and
- disposing the second substrate over the first substrate with the semiconductor die and graphene-coated interconnect between the first substrate and second substrate.
A method of making a semiconductor device, comprising:
- providing a substrate;
- forming a graphene-coated interconnect by,
- providing a copper core,
- forming a polymer coating on the copper core,
- forming a graphene coating on the polymer coating, and
- forming a solder coating on the graphene coating;
- disposing the graphene-coated interconnect over the substrate after forming the solder coating;
- and
- disposing a semiconductor die over the substrate.
A method of making a semiconductor device, comprising:
- providing a first substrate and a second substrate;
- forming a graphene-coated interconnect by,
- providing a copper core,
- forming a graphene coating on the copper core, and
- forming a solder coating on the graphene coating;
- disposing the graphene-coated interconnect between the first substrate and second substrate;
- and
- disposing a semiconductor die between the first substrate and second substrate.
A method of making a semiconductor device, comprising:
- providing a substrate;
- forming a graphene-coated interconnect by,
- providing a copper core,
- forming a graphene coating on the copper core, and
- forming a solder coating on the graphene coating;
- disposing the graphene-coated interconnect disposed over the substrate;
- disposing a solder between the substrate and the graphene-coated interconnect;
- and
- disposing a semiconductor die over the substrate.
Dependencies are inferred from the claim text.