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US 12,581,923 B2Granted
Method for removing edge of substrate in semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKenichi Sano, Chung-Liang Cheng, De-Yang Chiou, Kuan-Liang Liu, Pinyen Lin
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Abstract
A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.
Claims20
A method for treating a semiconductor structure, comprising:
- forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device, each of the device substrate and the carrier substrate including a main portion and an edge portion surrounding the main portion;
- forming a sealing element at a void that is positioned between the edge portion of the carrier substrate and the edge portion of the device substrate and that surrounds the semiconductor device and the bonding layer;
- directing a chemical fluid to impinge the upper surface of the device substrate so as to remove the edge portion of the device substrate;
- and
- after removal of the edge portion of the device substrate, removing the sealing element,
- wherein during impinging the device substrate using the chemical fluid, an etching rate of the device substrate is higher than an etching rate of the carrier substrate such that after removal of the edge portion of the device substrate,
- the main portion of the device substrate and the main portion of the carrier substrate remain on two opposite sides of the semiconductor device, respectively, and
- the edge portion of the carrier substrate remains and extends beyond the main portion of the device substrate and the semiconductor device.
5 more elements
A method for treating a semiconductor structure, comprising:
- forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having a proximate surface and a distal surface relative to the carrier substrate;
- forming a sealing element that covers a surface of the semiconductor device exposed from the carrier substrate and the device substrate, the sealing element having an inner surface that is connected to the surface of the semiconductor device;
- performing a planarization process over the distal surface of the device substrate, so that the planarized device substrate has a planarized surface opposite to the proximate surface, and includes a main portion and an edge portion surrounding the main portion, the edge portion having an outer section connected to the sealing element, and an inner section connected to a periphery of the semiconductor device and located between the main portion and the outer section;
- directing a chemical fluid to impinge the inner section of the edge portion so as to remove the edge portion of the planarized device substrate, while the main portion of the planarized device substrate remains on the semiconductor device;
- after removing the edge portion, removing the sealing element;
- and
- after removing the sealing element, removing the main portion of the planarized device substrate until a shallow trench isolation section of the semiconductor device is exposed.
4 more elements
A method for treating a semiconductor structure, comprising:
- forming the semiconductor structure which includes:
- a carrier substrate;
- a device substrate which has a dopant concentration different from a dopant concentration of the carrier substrate;
- a semiconductor device disposed between the carrier substrate and the device substrate;
- and
- a bonding layer disposed between the semiconductor device and the carrier substrate;
- forming a sealing element at a void that is positioned between an edge portion of the carrier substrate and an edge portion of the device substrate and that surrounds the semiconductor device and the bonding layer;
- performing an etching process on the semiconductor structure by directing a chemical fluid to impinge the edge portion of the device structure, an etching rate of the device substrate being higher than an etching rate of the carrier substrate;
- and
- after the etching process, removing the sealing element,
- wherein after the etching process, the edge portion of the device substrate is removed and the edge portion of the carrier substrate remains.
8 more elements
Dependencies are inferred from the claim text.