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US 12,581,922 B2Granted
Method for forming a high resistivity handle support for composite substrate
AssigneeSoitec
InventorsYoung-Pil Kim, Isabelle Bertrand, Christelle Veytizou
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Abstract
A method for forming a high resistivity handle substrate for a composite substrate comprises: providing a base substrate made of silicon; exposing the base substrate to a carbon single precursor at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer having a thickness of at least 10 nm on the surface of the base substrate; and then growing a polycrystalline charge trapping layer on the carbon-containing layer.
Claims20
A method for forming a high resistivity handle substrate for a composite substrate, the method comprising:
- providing a base substrate comprising monocrystalline silicon;
- exposing the base substrate to a single carbon species precursor gas free of silicon precursors at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer having a thickness of at least 10 nm on the surface of the base substrate;
- and then
- growing a polycrystalline charge trapping layer on the polycrystalline silicon carbide layer.
1 more element
Dependencies are inferred from the claim text.