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US 12,581,882 B2Granted
Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorNaofumi Ohashi
Life of this patent
Estimating the term…
Abstract
There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
Claims16
A substrate processing method, comprising:
- forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate;
- and
- removing the modified film while forming a protective film on the modified film by supplying a removal gas activated by plasma and supplying a protective-film-forming gas,
- wherein the act of removing the modified film includes supplying the plasma-activated removal gas and the protective-film-forming gas simultaneously, and the protective-film-forming gas is decomposed and adsorbed on the modified film to form the protective film on the modified film.
1 more element
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate;
- and
- removing the modified film while forming a protective film on the modified film by supplying a removal gas activated by plasma and supplying a protective-film-forming gas,
- wherein the act of removing the modified film includes supplying the plasma-activated removal gas and the protective-film-forming gas simultaneously, and the protective-film-forming gas is decomposed and adsorbed on the modified film to form the protective film on the modified film.
1 more element
Dependencies are inferred from the claim text.