Imaging device comprising net shape wiring

A semiconductor device comprising:

• a wiring layer having a net shape comprising openings;
• a capacitor comprising a first conductive layer and a second conductive layer overlapping each other with an insulating layer interposed therebetween;
• a photoelectric conversion element;
• and
• a first transistor, a second transistor, a third transistor, and a fourth transistor,
• wherein light enters the photoelectric conversion element through a lens, a color filter, and one of the openings,
• wherein the wiring layer is electrically connected to one of the first conductive layer and the second conductive layer through a contact plug,
• wherein one of a source and a drain of the first transistor is electrically connected to the photoelectric conversion element,
• wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
• wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
• wherein one of a source and a drain of the fourth transistor is electrically connected to the gate of the second transistor,
• wherein a first wiring is electrically connected to the other of the source and the drain of the second transistor,
• wherein the first wiring comprises a first region extending in a first direction,
• wherein the wiring layer comprises a second region extending along the one of the openings in the first direction,
• wherein the first region and the second region overlap with each other along the first direction,
• wherein a second wiring is electrically connected to the other of the source and the drain of the third transistor, and
• wherein the first wiring and the second wiring are positioned in the same layer.