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US 12,581,670 B2Granted
Semiconductor device with programmable insulating layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorYing-Cheng Chuang
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positioned on the programmable insulating layer. The programmable insulating layer is configured to be blown out under a programming voltage.
Claims8
A semiconductor device, comprising:
- a substrate;
- a valley inwardly positioned on a top surface of the substrate;
- a programmable insulating layer conformally positioned on the valley and comprising a V-shaped cross-sectional profile to define two top ends;
- and
- a top electrode positioned on the programmable insulating layer at a position that a top surface of the top electrode is located above the top surface of the substrate;
- wherein a width of the valley is equal to a width of the programmable insulating layer between the top ends thereof, and is equal to a width of the top electrode;
- wherein the programmable insulating layer is configured to be blown out under a programming voltage;
- wherein the top electrode comprises a bottom portion positioned on the programmable insulating layer and a top portion positioned on the bottom portion, wherein a top surface of the bottom portion of the top electrode is located above the top surface of the substrate, wherein a width of the bottom portion at the top surface thereof is equal to a width of the top portion at a top surface thereof.
5 more elements
Dependencies are inferred from the claim text.