Column redundancy circuit and memory device including same
AssigneeSamsung Electronics Co., Ltd.
InventorsKiryong Kim, Inhak Lee, Jaesung Choi
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AssigneeSamsung Electronics Co., Ltd.
InventorsKiryong Kim, Inhak Lee, Jaesung Choi
Estimating the term…
An example column redundancy circuit of a memory device comprises a pre-decoder circuit, a main decoder circuit, and a shift logic circuit. The pre-decoder circuit is configured to receive a lower column address from a plurality of fault column addresses and perform a first decoding operation, and to receive an upper column address from the plurality of fault column address and perform a second decoding operation. The main decoder circuit includes a plurality of main decoders, and each main decoder is configured to receive a lower signal and one or more upper signals from the pre-decoder circuit and to perform a main decoding operation. The shift logic circuit includes a plurality of shift logics, and each shift logic is configured to generate a shift signal that performs a column shift operation according to a result of the main decoding operation.
A column redundancy circuit of a memory device, the column redundancy circuit comprising:
A column redundancy circuit of a memory device, the column redundancy circuit comprising:
A memory device comprising:
Dependencies are inferred from the claim text.