Hybrid computer module element X-(cross)-point memory

A server including a hybrid computing module effective to operate at frequency within Terahertz (THz) frequency domain and comprising an intrinsic clock and configured to received applied signals, a processor for converting voltage, wherein the hybrid computing module comprises, a semiconductor embedded within a high speed semiconductor embedded within a high speed semiconductor chip stack of dies or semiconductor carrier with one or more separate items of the following:

• at least one hybrid computing module that is constructed to operate at a clock speed that optimally matches the intrinsic clock speed of said semiconductor die embedded within the high speed semiconductor chip stack or semiconductor die mounted upon the semiconductor carrier with at least one chip or die that has circuit elements surface bonded to it,
• wherein at least one semiconductor embedded within the high-speed semiconductor chip stack or semiconductor die mounted upon the semiconductor carrier is a resistive element X-Point (Cross-Point) memory device, and
• wherein said passive circuit comprises electroceramic dielectric members having a polarization response time determined solely by orbital deformations within and operates in phase, thus does not distort, any of the applied signal components forming a high-speed digital pulse operating at clock speeds that run within Terahertz (THz) frequency domain.