Current-assisted photonic demodulator including doped modulation and collection regions arranged vertically and located in a compressive zone

A current-assisted photonic demodulator configured to detect light radiation of interest, including:

• a detection portion, having a first face and a second face opposite one another and parallel with a main plane, and including a central incident light radiation detection zone,
• made of a first crystalline semiconductor material comprising germanium,
• including doped regions, of which:
• at least two p-doped modulation regions, intended to generate and modulate a drift current in the detection portion;
• at least one n-doped collection region, intended to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest;
• a dielectric passivation layer, produced from an electrically insulating material, and covering the first face;
• electrodes located at the first face and passing through the dielectric passivation layer, of which modulation electrodes are in electrical contact with the at least two p-doped modulation regions;
• and at least one collection electrode is in electrical contact with at least the one n-doped collection region;
• a peripheral lateral portion, surrounding the detection portion in the main plane,
• produced from a second material having a coefficient of thermal expansion less than that of the first material, the detection portion then having tensile mechanical stress in the main plane and compressive mechanical stress in a vertical axis orthogonal to the main plane;
• wherein said doped regions are disposed according to a vertical arrangement such that:
• at least one upper region, doped according to a first type of conductivity, is flush with the first face and is located within the central zone;
• at least two lower regions, doped according to a second type of conductivity opposite the first type, are located at a distance along the vertical axis from the at least one upper doped region.