Tin-containing precursors for deposition of tin-containing thin films and their corresponding deposition processes

Abstract

A method for forming a tin-containing film on a substrate comprises: exposing the substrate to a vapor or a liquid of a film-forming composition that comprises a tin-containing precursor having the general formula: (R3Sn)2NR′, wherein R and R′ each are independently H, a C1 to C6 linear, branched or cyclic alkyl group, or a C1 to C4 linear, branched or cyclic saturated hydrofluorocarbon group, and depositing at least part of the tin-containing precursor onto the substrate to form the tin-containing film using a deposition method. The exemplary tin-containing precursors include (Me3Sn)2NMe, (Me3Sn)2NEt, (Me3Sn)2N(nPr), (Me3Sn)2N(nBu) and (Me3Sn)2N(CH2CF3).

Dependencies are inferred from the claim text.