Method for manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chuan Teng, Ching-Kai Shen, Jung-Kuo Tu
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes the operations as follows. A first substrate having a top surface is received. A semiconductor layer is formed over the first substrate. A cavity is formed at the top surface of the semiconductor layer. A second substrate is bonded over the first substrate to cover the semiconductor layer. The second substrate has a through hole connected to the cavity of the semiconductor layer. A eutectic sealing structure is formed on the second substrate to cover the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.
Claims20
A method for manufacturing a semiconductor structure, the method comprising:
- receiving a first substrate having a top surface;
- forming a semiconductor layer over the top surface of the first substrate;
- forming a cavity at a top surface of the semiconductor layer;
- bonding a second substrate over the first substrate to cover the semiconductor layer, wherein the second substrate has a through hole connected to the cavity of the semiconductor layer;
- and
- forming a eutectic sealing structure on the second substrate to cover the through hole, comprising:
- forming the first metal layer on the second substrate to cover the through hole;
- forming the second metal layer over the first metal layer;
- and
- annealing the first metal layer and the second metal layer at a eutectic temperature to bond the second metal layer on the first metal layer,
- wherein a protrusion is formed at a top surface of the first metal layer during annealing the first metal layer and the second metal layer.
A method for manufacturing a semiconductor structure, the method comprising:
- receiving a stack structure having a cavity in the stack structure, and a through hole in proximity to a side of the stack structure, wherein the through hole is connected to the cavity;
- and
- forming a eutectic sealing structure on the side of the stack structure to cover the through hole;
- wherein the eutectic sealing structure comprises a first metal layer in contact with the side of the stack structure, and the first metal layer comprises a protrusion at a top surface of the first metal layer, wherein the protrusion of the eutectic sealing structure covers a center of the through hole from a top view.
A method for manufacturing a semiconductor structure, the method comprising:
- receiving a first substrate having a top surface;
- forming a semiconductor layer over the top surface of the first substrate;
- forming a cavity at a top surface of the semiconductor layer, wherein the cavity comprises a chamber portion and at least a peripheral micro channel connected to the chamber portion;
- bonding a second substrate over the first substrate to cover the semiconductor layer, wherein the second substrate comprises at least a through hole connected to the peripheral micro channel;
- vacuuming the cavity through the through hole;
- and
- sealing the cavity by a eutectic sealing structure covering the through hole, wherein the eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer, and forming the eutectic sealing structure comprises annealing the first metal layer and the second metal layer at a eutectic temperature,
- wherein a protrusion is formed at a top surface of the first metal layer during annealing the first metal layer and the second metal layer.
Dependencies are inferred from the claim text.