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US 12,575,749 B2Granted
Heterogeneous architecture integration of silicon photodiode and accelerometer
AssigneeAnalog Devices, Inc.
InventorShrenik Deliwala
Life of this patent
Estimating the term…
Abstract
A novel, modified MEMS accelerometer with additional ability to measure optical radiation due to integration of silicon photodiode in the silicon cap. The silicon cap is used to protect the MEMS based accelerometer from the environment. The function of the cap is enhanced to include optical measurement. The entire sensor element including accelerometer and photodiode (XL+PD) occupies no more space than the XL alone.
Claims14
A single package accelerometer and photodiode comprising:
- an accelerometer having a top portion and a bottom portion, the top portion of the accelerometer comprising a MEMS device;
- a cap having a top portion and bottom portion, the cap defining an etched cavity configured to enclose the MEMS device of the accelerometer, the cap arranged in a stacked configuration upon a first semiconductor structure comprising the accelerometer;
- and,
- wherein the cap comprises a second semiconductor structure comprising a photodiode, the photodiode having a top portion and bottom portion, a photosensitive region of the photodiode located in the top portion of the cap on a surface of the cap opposite the etched cavity, the etched cavity facing the MEMS device;
- and
- wherein the accelerometer and photodiode are included as a portion of a commonly shared integrated circuit package.
3 more elements
A system in an integrated circuit package comprising:
- a substrate;
- a light source disposed on the substrate;
- an accelerometer having a top portion and a bottom portion, the top portion of the accelerometer comprising a MEMS device;
- a cap having a top portion and bottom portion, the cap defining an etched cavity configured to enclose the MEMS device of the accelerometer, the cap arranged in a stacked configuration upon a first semiconductor structure comprising the accelerometer, the cap comprising a second semiconductor comprising a photodiode, the photodiode having a top portion and bottom portion, a photosensitive region of the photodiode located in the top portion of the cap on a surface of the cap opposite the etched cavity, the etched cavity facing the MEMS device;
- a septum disposed on the substrate between the light source and the photodiode, the septum configured to block direct illumination of the photodiode by the light source;
- and
- an ASIC in electrical communication with photodiode and accelerometer.
4 more elements
Dependencies are inferred from the claim text.